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Semi-transparent ZnO:Al/Cu2O Thin-film Heterojunction Fabricated At Low Temperature: Effect Of An Intrinsic ZnO Buffer Layer At The Junction

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Semi-transparent ZnO:Al/Cu2O Thin-film Heterojunction Fabricated At Low Temperature: Effect Of An Intrinsic ZnO Buffer Layer At The Junction

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Title: Semi-transparent ZnO:Al/Cu2O Thin-film Heterojunction Fabricated At Low Temperature: Effect Of An Intrinsic ZnO Buffer Layer At The Junction
Author: Huang, Yu-Nung
Abstract: The Al-doped ZnO (AZO)/Cu2O semi-transparent heterojunction was realized by an RF sputtering at low temperature in this study. Specifically, the usage of a buffer layer in the junction structure has been found as a key factor influencing the carrier transport mechanisms and performance of the junction. First, the chemical bath deposition (CBD) has been utilized in depositing an intrinsic ZnO (i-ZnO) buffer layer in order to entirely avoid potential plasma damage from a subsequent sputter deposition process. Increasing pH of CBD solution was critical in delaying the formation of detrimental ZnOHx particles in the solution and the assistance of ultrasonication improved the uniformity of i-ZnO further by minimizing the adherence of ZnOHx particles on the growing surface of i-ZnO. The deposition of i-ZnO buffer layer on top of AZO prior to the sputter deposition of Cu2O produced rectifying junctions by reducing the tunneling of charge carriers through interface defects at the junction. Yet, it is concluded that the presence of the defects at the junction cannot be avoided due to the lattice mismatch between Cu2O and ZnO limiting the performance of the device intrinsically.
URI: http://hdl.handle.net/10106/9558
Date: 2012-04-11

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