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A High Fill Factor CMOS Image Sensor For IR Camera Applications

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A High Fill Factor CMOS Image Sensor For IR Camera Applications

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dc.contributor.author McBride, Daniel en_US
dc.date.accessioned 2010-11-01T21:29:03Z
dc.date.available 2010-11-01T21:29:03Z
dc.date.issued 2010-11-01
dc.date.submitted January 2010 en_US
dc.identifier.other DISS-10794 en_US
dc.identifier.uri http://hdl.handle.net/10106/5164
dc.description.abstract In this thesis, a unit cell for high-SNR applications is presented. The proposed circuit is significantly smaller than other circuits that perform dark current subtraction because less circuitry is used inside the unit cell. The proposed circuit uses only two transistors and one resistor inside each unit cell to suppress the dark current. The size of the circuit in the layout is 25 um x 25 µm. With this new unit cell and routing approach, the size of the unit cell was reduced by 300% compared to other circuits which also suppress dark current. en_US
dc.description.sponsorship Jung, Sungyong en_US
dc.language.iso en en_US
dc.publisher Electrical Engineering en_US
dc.title A High Fill Factor CMOS Image Sensor For IR Camera Applications en_US
dc.type M.S. en_US
dc.contributor.committeeChair Jung, Sungyong en_US
dc.degree.department Electrical Engineering en_US
dc.degree.discipline Electrical Engineering en_US
dc.degree.grantor University of Texas at Arlington en_US
dc.degree.level masters en_US
dc.degree.name M.S. en_US

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