RESEARCH COMMONS
LIBRARY

Transformation of electrical transport from variable range hopping to hard gap resistance in Zn[subscript]1−[subscript]xFe[subscript]xO[subscript]1[subscript]v magnetic semiconductor films

ResearchCommons/Manakin Repository

Transformation of electrical transport from variable range hopping to hard gap resistance in Zn[subscript]1−[subscript]xFe[subscript]xO[subscript]1[subscript]v magnetic semiconductor films

Show simple item record

dc.contributor.author Tian, Y.F.
dc.contributor.author Yan, Shi-shen
dc.contributor.author Zhang, Y.P.
dc.contributor.author Song, H.Q.
dc.contributor.author Ji, G.
dc.contributor.author Liu, G.L.
dc.contributor.author Mei, M.L.
dc.contributor.author Liu, J. Ping
dc.contributor.author Altuncevahir, B.
dc.contributor.author Chakka, V.
dc.contributor.author Chen, Y.X.
dc.date.accessioned 2010-08-16T19:47:26Z
dc.date.available 2010-08-16T19:47:26Z
dc.date.issued 2006-11-16
dc.identifier.citation J. Appl. Phys. 100, 103901 (2006) en_US
dc.identifier.issn 0021-8979 (print)
dc.identifier.uri http://hdl.handle.net/10106/5017
dc.description.abstract Transformation of the electrical transport from the Efros and Shklovskii [J. Phys. C 8, L49 (1975)] variable range hopping to the “hard gap” resistance was experimentally observed in a low temperature range as the Fe compositions in Zn1−xFexO1−v ferromagnetic semiconductor films increase. A universal form of the resistance versus temperature, i.e., ρ∝exp[TH/T+(TES/T)1/2], was theoretically established to describe the experimental transport phenomena by taking into account the electron-electron Coulomb interaction, spin-spin exchange interaction, and hard gap energy. The spin polarization ratio, hard gap energy, and ratio of exchange interaction to Coulomb interaction were obtained by fitting the theoretical model to the experimental results. Moreover, the experimental magnetoresistance was also explained by the electrical transport model. en_US
dc.language.iso en_US en_US
dc.publisher American Institute of Physics en_US
dc.subject zinc compounds en_US
dc.subject magnetic semiconductors en_US
dc.subject semiconductor thin films en_US
dc.subject magnetic thin films en_US
dc.subject hopping conduction en_US
dc.subject energy gap en_US
dc.subject ferromagnetic materials en_US
dc.subject spin-spin interactions en_US
dc.subject electron spin polarisation en_US
dc.subject exchange interactions (electron) en_US
dc.subject magnetoresistance en_US
dc.title Transformation of electrical transport from variable range hopping to hard gap resistance in Zn[subscript]1−[subscript]xFe[subscript]xO[subscript]1[subscript]v magnetic semiconductor films en_US
dc.type Article en_US
dc.publisher.department Department of Physics, The University of Texas at Arlington en_US
dc.identifier.externalLink http://link.aip.org/link/JAPIAU/v100/i10/p103901/s1 en_US
dc.identifier.externalLinkDescription The original publication is available at journal homepage en_US

Files in this item

Files Size Format View Description
AIP License.pdf 47.91Kb PDF View/Open License
Transformation of electrical transport.pdf 211.1Kb PDF View/Open PDF

This item appears in the following Collection(s)

Show simple item record

Browse

My Account

Statistics

About Us