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Thermo-mechanical Analysis Of A 3D Package In Microelectronics And Cooling Technologies For An IGBT Thermal Tester In Power Electronics

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Thermo-mechanical Analysis Of A 3D Package In Microelectronics And Cooling Technologies For An IGBT Thermal Tester In Power Electronics

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Title: Thermo-mechanical Analysis Of A 3D Package In Microelectronics And Cooling Technologies For An IGBT Thermal Tester In Power Electronics
Author: Menon, Abhilash Ramachandran
Abstract: In the past, compact components such as chip scale packages and flip chip packages were the work horses of miniaturization. However emerging applications are now demanding even higher packaging density which has led to the evolution of 3D packaging, some of the advantages being minimal conductor length, reduce speed limiting inter chip interconnects. This has resulted in the emergence of 3D packaging technologies like stacked package, through silicon vias (TSV), package on package (PoP) etc. In order to address the various challenging requirements, PoP is seen as the leading 3D packaging platform by the system designers and semiconductor suppliers. PoP is primarily stacking one package on top of the other. Depending on the power, due to the torturous heat flow path, it can result in high temperatures of the packaged die and the thermal specifications of the package can be easily exceeded. Due to its complex architecture, reliability related to thermo-mechanical issues is another challenge in the design of PoP. Hence Part-1 and Part-2 of the thesis lays the impetus on the thermal and thermo-mechanical analysis of a commercially available PoP. Power semiconductor devices are the essential components determining the efficiency, size and cost of electronic systems for energy conditioning. As the power density continues to increase and the product form factors continues to shrink, thermal management technologies and their applications early in the product design process is extremely important. Alternative thermal cooling technologies such as thermoelectric cooling and thermal diodes are being explored that provide precision cooling and heating in complex operating conditions to modular platforms like air conditioning, liquid and direct contact designs. Part 3 of the thesis focuses on the development of an insulated gate bipolar transistor (IGBT) thermal tester where thermal cycling is performed on the IGBT module by coming up with an appropriate thermoelectric cooler and heat sink arrangement. IGBT's represent the most commercially advanced device of a new family of power semiconductors synergizing high input impedance MOS-gate control with low forward voltage drop bipolar conduction. They are 3 terminal power semiconductors noted for high efficiency and fast switching.
URI: http://hdl.handle.net/10106/4943
Date: 2010-07-19
External Link: https://www.uta.edu/ra/real/editprofile.php?onlyview=1&pid=4

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