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Design And Fabrication Of Optically-pumped Guided-mode Resonance Surface-emitting Lasers

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Design And Fabrication Of Optically-pumped Guided-mode Resonance Surface-emitting Lasers

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dc.contributor.author Young, Preston Phillip en_US
dc.date.accessioned 2007-08-23T01:56:45Z
dc.date.available 2007-08-23T01:56:45Z
dc.date.issued 2007-08-23T01:56:45Z
dc.date.submitted May 2006 en_US
dc.identifier.other DISS-1300 en_US
dc.identifier.uri http://hdl.handle.net/10106/444
dc.description.abstract This dissertation describes the design and fabrication of guided-mode resonance (GMR) structures and their applications to laser devices. These include tunable Ti:Sapphire lasers as well as semiconductor lasers with integrated light emitting layers. The resonance characteristics of GMR structures are determined by the designed and fabricated waveguide-grating parameters. The primary tool for the design and simulation analysis of GMR devices is rigorous coupled-wave analysis (RCWA). This numerical method is used to provide diffraction efficiency calculations as well as simulations of the electric fields within GMR structures. RCWA-based field analysis is used to design an optically pumped GMR surface-emitting laser (GMR-SEL) in the GaAs/AlxGa1-xAs material system with an In0.2Ga0.8As quantum well for output wavelength near 980 nm. All optical GMR devices require patterning of sub-micron diffraction grating structures. Preliminary GMR grating fabrication is performed by holographic interference lithography and is optimized by utilizing a charge-coupled device (CCD) camera-based fringe stabilization system. Prototype GMR-SEL devices are fabricated in the GaAs/AlxGa1-xAs material system by electron-beam lithography and reactive-ion etching (RIE). Electron-beam lithography is performed using hydrogen silsesquioxane (HSQ) as high-resolution resist material. The results of exposure proximity correction for electron-beam lithography are presented. An RIE process suitable for reliable etching of the HSQ grating patterns into a semiconductor GMR-SEL wafer is developed and characterized. The fabricated prototype GMR-SEL devices are optically pumped at an oblique GMR resonance angle near 45º corresponding to the 810 nm output of a Ti:Sapphire laser. Whereas these elements have insufficient gain for lasing, the measured photoluminescence spectra for several devices exhibit spectral peaks that occur precisely at the theoretical GMR-SEL resonance locations. Therefore, this dissertation provides results and methods useful to experimentally realize prototype GMR-SEL devices fabricated in semiconductor materials. en_US
dc.description.sponsorship Magnusson, Robert en_US
dc.language.iso EN en_US
dc.publisher Electrical Engineering en_US
dc.title Design And Fabrication Of Optically-pumped Guided-mode Resonance Surface-emitting Lasers en_US
dc.type Ph.D. en_US
dc.contributor.committeeChair Magnusson, Robert en_US
dc.degree.department Electrical Engineering en_US
dc.degree.discipline Electrical Engineering en_US
dc.degree.grantor University of Texas at Arlington en_US
dc.degree.level doctoral en_US
dc.degree.name Ph.D. en_US
dc.identifier.externalLink https://www.uta.edu/ra/real/editprofile.php?onlyview=1&pid=2434
dc.identifier.externalLinkDescription Link to Research Profiles

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