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Fabrication, Characterization And Hall Mobility Analysis Of MOS Devices With Low-k And High-k Dielectric Materials

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Fabrication, Characterization And Hall Mobility Analysis Of MOS Devices With Low-k And High-k Dielectric Materials

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dc.contributor.author Agrawal, Rakshit en_US
dc.date.accessioned 2007-08-23T01:56:31Z
dc.date.available 2007-08-23T01:56:31Z
dc.date.issued 2007-08-23T01:56:31Z
dc.date.submitted December 2006 en_US
dc.identifier.other DISS-1565 en_US
dc.identifier.uri http://hdl.handle.net/10106/341
dc.description.abstract Scaling of MOSFETS has led to leakage current problems in SiO2 dielectric based MOSFETS. This has led to the introduction of high-k dielectric materials which can afford greater physical thickness and achieve the same capacitance with lesser equivalent oxide thickness. But the high-k devices have certain limitations like channel mobility degradation. Mobility degradation in high-k MISFETS is discussed in this work using Hall measurements. The MOS devices were fabricated with SiO2 and HfSiO, on p-type silicon substrate. The fabrication process flow used for both type of MOS devices is explained. Characterization and analysis was performed for the determination of various parameters related to these devices like dielectric thickness. Hall mobility measurements were performed on the specially designed multi-drain Hall bars for different gate biases in low magnetic field regime. Higher Hall mobility was observed in the SiO2 based devices than HfSiO based devices. en_US
dc.description.sponsorship Kirk, Wiley en_US
dc.language.iso EN en_US
dc.publisher Electrical Engineering en_US
dc.title Fabrication, Characterization And Hall Mobility Analysis Of MOS Devices With Low-k And High-k Dielectric Materials en_US
dc.type M.S. en_US
dc.contributor.committeeChair Kirk, Wiley en_US
dc.degree.department Electrical Engineering en_US
dc.degree.discipline Electrical Engineering en_US
dc.degree.grantor University of Texas at Arlington en_US
dc.degree.level masters en_US
dc.degree.name M.S. en_US
dc.identifier.externalLink https://www.uta.edu/ra/real/editprofile.php?onlyview=1&pid=253
dc.identifier.externalLinkDescription Link to Research Profiles

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