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Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)

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Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)

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dc.contributor.author Tao, Meng
dc.contributor.author Xu, Yuqing
dc.contributor.author Kirk, Wiley P.
dc.contributor.author Maldonado, Eduardo
dc.contributor.author Udeshi, Darshak
dc.date.accessioned 2010-10-15T18:15:27Z
dc.date.available 2010-10-15T18:15:27Z
dc.date.issued 2004-01-26
dc.identifier.citation Published in: Journal Of Applied Physics en_US
dc.identifier.uri http://hdl.handle.net/10106/5087
dc.description.abstract The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200 °C to 480 °C in air, the Se-passivated samples are much more resistant to Schottky transition as compared to the bare samples. The bare samples turn to Schottky below 300 °C, whereas the passivated samples are ohmic all the way to 400 °C. A difference of over 100 °C is observed between the two types of samples. Schottky barrier heights are determined using capacitance–voltage and activation–energy methods. The bare samples reach a maximum barrier height of 0.39 eV as determined by activation–energy measurements, while the passivated samples maximize at 0.19 eV. We deduce that a monolayer of Se suppresses silicidation between Ti and Si by eliminating dangling bonds on Si(001). en_US
dc.description.sponsorship Donors of the Petroleum Research Fund. Partial support Semiconductor Research Corporation en_US
dc.language.iso en_US en_US
dc.publisher AIP en_US
dc.subject annealing en_US
dc.subject dangling bonds en_US
dc.subject elemental semiconductors en_US
dc.subject monolayers en_US
dc.subject ohmic contacts en_US
dc.subject passivation en_US
dc.subject Schottky barriers en_US
dc.subject selenium en_US
dc.subject silicon en_US
dc.subject thermal stability en_US
dc.subject titanium en_US
dc.title Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001) en_US
dc.type Article en_US
dc.publisher.department Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington en
dc.publisher.department Texas Instruments en
dc.identifier.externalLink https://www.uta.edu/ra/real/editprofile.php?pid=291&onlyview=1 en_US
dc.identifier.externalLinkDescription Link to Research Profiles en_US

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